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PDF FDME910PZT Data sheet ( Hoja de datos )

Número de pieza FDME910PZT
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDME910PZT Hoja de datos, Descripción, Manual

FDME910PZT
P-Channel PowerTrench® MOSFET
-20 V, -8 A, 24 mΩ
Features
„ Max rDS(on) = 24 mΩ at VGS = -4.5 V, ID = -8 A
„ Max rDS(on) = 31 mΩ at VGS = -2.5 V, ID = -7 A
„ Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -6 A
„ Low profile: 0.55 mm maximum in the new package MicroFET
1.6x1.6 Thin
„ HBM ESD protection level > 2 kV typical (Note 3)
„ Free from halogenated compounds and antimony oxides
„ RoHS Compliant
February 2015
General Description
This device is designed specifically for battery charging or load
switching in cellular handset and other ultraportable applications.
It features a MOSFET with low on-state resistance and zener
diode protection against ESD. The MicroFET 1.6x1.6 Thin
package offers exceptional thermal performance for its physical
size and is well suited to switching and linear mode applications.
G
D
D
Pin 1
S
S
D
D
Bottom Drain Contact
D1
6D
D2
5D
G3
4S
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
-20
±8
-8
-32
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1a)
60
175
°C/W
Device Marking
E91
Device
FDME910PZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C3
1
www.fairchildsemi.com

1 page




FDME910PZT pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 175 oC/W
(Note 1b)
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-3
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDME910PZT Rev.C3
5
www.fairchildsemi.com

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