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PDF FDMA86265P Data sheet ( Hoja de datos )

Número de pieza FDMA86265P
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMA86265P Hoja de datos, Descripción, Manual

May 2014
FDMA86265P
P-Channel PowerTrench® MOSFET
-150 V, -1 A, 1.2 Ω
Features
General Description
„ Max rDS(on) = 1.2 Ω at VGS = -10 V, ID = -1 A
„ Max rDS(on) = 1.4 Ω at VGS = -6 V, ID = -0.9 A
„ Low Profile - 0.8 mm maximum in the new package MicroFET
2x2 mm
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
has been optimized for the on-state resistance and yet maintain
superior switching performance.
„ Very low RDS-on mid voltage P-channel silicon technology
optimised for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
Applications
„ Active Clamp Switch
„ Load Switch
„ 100% UIL tested
„ RoHS Compliant
Pin 1
Drain
DD G
Source
BBootttotomm DDraraininCCoonnta- ct
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
-150
±25
-1
-2
6
2.4
0.9
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
52
145
°C/W
Device Marking
265
Device
FDMA86265P
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMA86265P Rev.C
1
www.fairchildsemi.com

1 page




FDMA86265P pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
0.0005
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 145 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
100
1000
©2014 Fairchild Semiconductor Corporation
FDMA86265P Rev.C
5
www.fairchildsemi.com

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