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PDF FDMB3900AN Data sheet ( Hoja de datos )

Número de pieza FDMB3900AN
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMB3900AN Hoja de datos, Descripción, Manual

FDMB3900AN
Dual N-Channel PowerTrench® MOSFET
25 V, 7.0 A, 23 mΩ
June 2013
Features
General Description
„ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A
„ Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A
„ Fast switching speed
These N-Channel Logic Level MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench® process
that has been especially tailored to minimize the on-state
resistance and yet maintain superior switching performance.
„ Low gate charge
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability
These devices are well suited for low voltage and battery
powered applications where the low in-line power loss and fast
switching are required.
„ RoHS Compliant
Pin 1
MicroFET 3X1.9
D2 5
D2 6
D1 7
D1 8
Q2
4 G2
3 S2
Q1
2 G1
1 S1
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
25
±20
7.0
28
1.6
0.8
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
80
165
°C/W
Device Marking
3900
Device
FDMB3900AN
Package
MicroFET 3X1.9
Reel Size
7 ’’
Tape Width
8 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C3
1
www.fairchildsemi.com

1 page




FDMB3900AN pdf
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
PDM
0.01
SINGLE PULSE
RθJA = 165 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
1000
©2011 Fairchild Semiconductor Corporation
FDMB3900AN Rev.C3
5
www.fairchildsemi.com

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