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PDF FDME820NZT Data sheet ( Hoja de datos )
| Número de pieza | FDME820NZT | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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October 2013
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level >2.5 kV (Note3)
RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
G
D
Pin 1 D
S
DD
S
D
D
DD
GS
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Power Dissipation for Single Operation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±12
9
40
2.1
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
70
190
°C/W
Device Marking
8T
Device
FDME820NZT
Package
MicroFET 1.6x1.6 Thin
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 190 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (s)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDME820NZT.PDF ] | |
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