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PDF FDMA7628 Data sheet ( Hoja de datos )
| Número de pieza | FDMA7628 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMA7628
May 2012
Single N-Channel 1.5 V Specified PowerTrench® MOSFET
20 V, 9.4 A, 14.5 mΩ
Features
General Description
Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 9.4 A
Max rDS(on) = 18.2 mΩ at VGS = 2.5 V, ID = 8.3 A
Max rDS(on) = 23.3 mΩ at VGS = 1.8 V, ID = 7.3 A
Max rDS(on) = 32.3 mΩ at VGS = 1.5 V, ID = 6.2 A
Low Profile-0.8 mm maximum in the new package MicroFET
2x2 mm
RoHS Compliant
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench® process to
optimize the rDS(ON) @ VGS = 1.5 V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
DC-DC Buck Converters
Pin 1
Drain
DD G
Source
Bottom Drain Contact
DD
DD
DD S
MicroFET 2X2 (Bottom View)
G
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25 °C
Power Dissipation
TA = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
9.4
54
1.9
0.7
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
(Note 1b)
65
180
°C/W
Device Marking
104
Device
FDMA7628
Package
MicroFET 2X2
Reel Size
7 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
4.5
ID = 9.4 A
3.6
2.7
1.8
0.9
VDD = 8 V
VDD = 10 V
VDD = 12 V
0.0
0
3 6 9 12 15 18
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
5000
1000
Ciss
Coss
100
Crss
10
0.1
f = 1 MHz
VGS = 0 V
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
20
Figure8. Capacitance vsDrain
to Source Voltage
100
10 100 us
1
0.1
0.01
0.01
1 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 180 oC/W
TA = 25 oC
10 ms
100 ms
1s
10 s
DC
0.1 1 10 100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe
Operating Area
1000
100
10
SINGLE PULSE
RθJA = 180 oC/W
TA = 25 oC
1
0.1
10-4 10-3 10-2 10-1
1
10
t, PULSE WIDTH (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
SINGLE PULSE
RθJA = 180 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 11. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMA7628 Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMA7628.PDF ] | |
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