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Número de pieza | FDMC86260ET150 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FDMC86260ET150
N-Channel Power Trench® MOSFET
150 V, 25 A, 34 mΩ
January 2015
Features
General Description
Extended TJ rating to 175°C
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
High performance technology for extremely low rDS(on)
100% UIL Tested
Termination is Lead-free
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
RoHS Compliant
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
150
±20
25
18
5.4
116
121
65
2.8
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86260ET
Device
FDMC86260ET150
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC86260ET150 Rev. C1
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 2.3 oC/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMC86260ET150 Rev. C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC86260ET150.PDF ] |
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FDMC86260ET150 | MOSFET ( Transistor ) | Fairchild Semiconductor |
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