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Número de pieza | FDMC86160ET100 | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
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No Preview Available ! FDMC86160ET100
N-Channel Shielded Gate PowerTrench® MOSFET
100 V, 43 A, 14 mΩ
January 2015
Features
General Description
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance. This device is well suited
for applications where ulta low RDS (on) is required in small
spaces such as High performance VRM, POL and orring
functions.
Applications
Bridge Topologies
Synchronous Rectifier
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
Top Bottom
Power 33
SD
GD
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
100
±20
43
31
9
204
181
65
2.8
-55 to +175
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86160ET
Device
FDMC86160ET100
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC86160ET100 Rev. C1
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
SINGLE PULSE
0.001
10-5
10-4
10-3
10-2
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 2.3 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMC86160ET100 Rev.C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC86160ET100.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC86160ET100 | MOSFET ( Transistor ) | Fairchild Semiconductor |
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