|
|
PDF FDMC86570LET60 Data sheet ( Hoja de datos )
| Número de pieza | FDMC86570LET60 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de FDMC86570LET60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
January 2015
FDMC86570LET60
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 87 A, 4.3 mΩ
Features
Extended TJ rating to 175°C
Shielded Gate MOSFET Technology
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Pin 1
Pin 1
SS
SG
S
S
D
D
D
DD
D
SD
GD
Top PPoowweerr 3333 Bottom
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
(Note 1)
(Note 1a)
Ratings
60
±20
87
62
18
436
253
65
2.8
-55 to +175
2.3
53
Units
V
V
A
mJ
W
°C
°C/W
Device Marking
FDMC86570LT
Device
FDMC86570LET60
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2015 Fairchild Semiconductor Corporation
FDMC86570LET60 Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 2.3 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2015 Fairchild Semiconductor Corporation
FDMC86570LET60 Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC86570LET60.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FDMC86570LET60 | MOSFET ( Transistor ) | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |