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PDF FDMC86259P Data sheet ( Hoja de datos )
| Número de pieza | FDMC86259P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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February 2014
FDMC86259P
P-Channel PowerTrench® MOSFET
-150 V, -13 A, 107 m:
Features
General Description
Max rDS(on) = 107 m: at VGS = -10 V, ID = -3 A
Max rDS(on) = 137 m: at VGS = -6 V, ID = -2.7 A
Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
This product is optimised for fast switching applications as
well as load switch applications
100% UIL Tested
RoHS Compliant
Applications
Active Clamp Switch
Load Switch
Pin 1
Pin 1
SS
S
G
D
D
DD
Top Bottom
Power 33
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-150
±25
-13
-3.2
-20
181
62
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
2.0
53
°C/W
Device Marking
FDMC86259P
Device
FDMC86259P
Package
Power 33
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMC86259P Rev.C
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
0.01
0.005
10-5
SINGLE PULSE
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZTJC(t) = r(t) x RTJC
RTJC = 2.0 oC/W
Peak TJ = PDM x ZTJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2014 Fairchild Semiconductor Corporation
FDMC86259P Rev.C
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMC86259P.PDF ] | |
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