|
|
Número de pieza | FDMC6688P | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC6688P (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! February 2015
FDMC6688P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 6.5 mΩ
Features
General Description
Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
Load Switch
Battery Management
Power Management
Reverse Polarity Protection
Pin 1
Pin 1
SS SG
S
S
D
D
DDDD
SD
GD
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Parameter
TC = 25 °C
TA = 25 °C
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-20
±8
-56
-14
-226
30
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.8
53
°C/W
Device Marking
FDMC6688P
Device
FDMC6688P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMC6688P Rev.C1
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.005
10-5
SINGLE PULSE
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t)
RθJC =
=3.r8(to)Cx/WRθJC
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
Figure 12. Junction-to-Case Transient Thermal Response Curve
1
©2014 Fairchild Semiconductor Corporation
FDMC6688P Rev.C1
5
www.fairchildsemi.com
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet FDMC6688P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC6688P | MOSFET ( Transistor ) | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |