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PDF FDMC6688P Data sheet ( Hoja de datos )

Número de pieza FDMC6688P
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC6688P Hoja de datos, Descripción, Manual

February 2015
FDMC6688P
P-Channel PowerTrench® MOSFET
-20 V, -56 A, 6.5 mΩ
Features
General Description
„ Max rDS(on) = 6.5 mΩ at VGS = -4.5 V, ID = -14 A
„ Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -11 A
„ Max rDS(on) = 20 mΩ at VGS = -1.8 V, ID = -9 A
„ High performance trench technology for extremely low rDS(on)
„ High power and current handling capability in a widely used
surface mount package
„ Lead-free and RoHS Compliant
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
„ Load Switch
„ Battery Management
„ Power Management
„ Reverse Polarity Protection
Pin 1
Pin 1
SS SG
S
S
D
D
DDDD
SD
GD
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Parameter
TC = 25 °C
TA = 25 °C
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-20
±8
-56
-14
-226
30
2.3
-55 to +150
Units
V
V
A
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.8
53
°C/W
Device Marking
FDMC6688P
Device
FDMC6688P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMC6688P Rev.C1
1
www.fairchildsemi.com

1 page




FDMC6688P pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
0.005
10-5
SINGLE PULSE
10-4
10-3
10-2
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJC(t)
RθJC =
=3.r8(to)Cx/WRθJC
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-1
Figure 12. Junction-to-Case Transient Thermal Response Curve
1
©2014 Fairchild Semiconductor Corporation
FDMC6688P Rev.C1
5
www.fairchildsemi.com

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