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PDF FDMC510P Data sheet ( Hoja de datos )
| Número de pieza | FDMC510P | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC510P
P-Channel PowerTrench® MOSFET
-20 V, -18 A, 8.0 mΩ
Features
Max rDS(on) = 8.0 mΩ at VGS = -4.5 V, ID = -12 A
Max rDS(on) = 9.8 mΩ at VGS = -2.5 V, ID = -10 A
Max rDS(on) = 13 mΩ at VGS = -1.8 V, ID = -9.3 A
Max rDS(on) = 17 mΩ at VGS = -1.5 V, ID = -8.3 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used
surface mount package
100% UIL Tested
Termination is Lead-free and RoHS Compliant
HBM ESD capability level >2 KV typical (Note 4)
June 2014
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been optimized for rDS(ON), switching performance and
ruggedness.
Applications
Battery Management
Load Switch
Top Bottom
Pin 1
S SG
S
DD
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
-20
±8
-18
-12
-50
37
41
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3
53
°C/W
Device Marking
FDMC510P
Device
FDMC510P
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC510P Rev.C8
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.001
10-4
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
FDMC510P Rev.C8
5 www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC510P.PDF ] | |
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