|
|
Número de pieza | FDMC86139P | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Fairchild Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FDMC86139P (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! FDMC86139P
P-Channel PowerTrench® MOSFET
-100 V, -15 A, 67 mΩ
June 2014
Features
General Description
Max rDS(on) = 67 mΩ at VGS = -10 V, ID = -4.4 A
Max rDS(on) = 89 mΩ at VGS = -6 V, ID = -3.6 A
Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
This product is optimised for fast switching applications as
well as load switch applications
100% UIL Tested
RoHS Compliant
Applications
Active Clamp Switch
Load Switch
Top Bottom
Pin 1
SS S
G
S
S
D
D
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
G
(Note 1a)
(Note 3)
(Note 1a)
D
D
Ratings
-100
±25
-15
-4.4
-30
121
40
2.3
-55 to + 150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.1
53
°C/W
Device Marking
FDMC86139P
Device
FDMC86139P
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86139P Rev.C2
1
www.fairchildsemi.com
1 page Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
0.0005
10-4
SINGLE PULSE
10-3
10-2
10-1
1
t, RECTANGULAR PULSE DURATION (sec)
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 oC/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
10 100
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDMC86139P Rev.C2
5
www.fairchildsemi.com
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet FDMC86139P.PDF ] |
Número de pieza | Descripción | Fabricantes |
FDMC86139P | MOSFET ( Transistor ) | Fairchild Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |