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PDF FDMC86340 Data sheet ( Hoja de datos )

Número de pieza FDMC86340
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMC86340 Hoja de datos, Descripción, Manual

January 2014
FDMC86340
N-Channel Shielded Gate Power Trench® MOSFET
80 V, 48 A, 6.5 mΩ
Features
General Description
„ Shielded Gate MOSFET Technology
„ Max rDS(on) = 6.5 mΩ at VGS = 10 V, ID = 14 A
„ Max rDS(on) = 8.5 mΩ at VGS = 8 V, ID = 12 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
„ DC-DC Conversion
Pin 1
Pin 1
S
S
SG
D
DD
D
Top Bottom
Power 33
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
80
±20
48
14
200
216
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86340
Device
FDMC86340
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86340 Rev. C2
1
www.fairchildsemi.com

1 page




FDMC86340 pdf
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
0.0001
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2013 Fairchild Semiconductor Corporation
FDMC86340 Rev. C2
5
www.fairchildsemi.com

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