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PDF FDMC86570L Data sheet ( Hoja de datos )
| Número de pieza | FDMC86570L | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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March 2015
FDMC86570L
N-Channel Shielded Gate PowerTrench® MOSFET
60 V, 84 A, 4.3 mΩ
Features
Shielded Gate MOSFET Technology
Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A
High performance technology for extremely low rDS(on)
Termination is Lead-free
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that
incorporates Shielded Gate technology. This process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Application
DC-DC Conversion
Pin 1
Pin 1
S
S
SG
S
S
D
D
D
DD
D
SD
GD
Top Bottom
Power 33
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 5)
(Note 1a)
(Note 4)
(Note 3)
(Note 1a)
Ratings
60
±20
84
53
18
416
253
54
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
2.3
53
°C/W
Device Marking
FDMC86570L
Device
FDMC86570L
Package
Power33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. 1.2
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted.
2
1 DUTY CYCLE-DESCENDING ORDER
0.1
0.01
0.001
10-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC(t) = r(t) x RθJC
RθJC = 2.3 °C/W
Peak TJ = PDM x ZθJC(t) + TC
Duty Cycle, D = t1 / t2
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2013 Fairchild Semiconductor Corporation
FDMC86570L Rev. 1.2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC86570L.PDF ] | |
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