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PDF FDMC8882 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8882 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC8882
N-Channel Power Trench® MOSFET
30 V, 16 A, 14.3 m:
May 2014
Features
General Description
Max rDS(on) = 14.3 m: at VGS = 10 V, ID = 10.5 A
Max rDS(on) = 22.5 m: at VGS = 4.5 V, ID = 8.3 A
High performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Application
High side in DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
Ratings
30
±20
16
34
10.5
40
18
2.3
-55 to +150
Units
V
V
A
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
6.6
53
°C/W
Device Marking
FDMC8882
Device
FDMC8882
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C3
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
2
1 DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
0.01
0.001
10-4
SINGLE PULSE
10-3
10-2
10-1
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Transient Thermal Response Curve
PDM
t1
t2
NOTES:
ZθJA(t) = r(t) x RθJA
RθJA = 125 °C/W
Peak TJ = PDM x ZθJA(t) + TA
Duty Cycle, D = t1 / t2
100 1000
©2010 Fairchild Semiconductor Corporation
FDMC8882 Rev.C3
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDMC8882.PDF ] | |
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