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PDF FDMC8588 Data sheet ( Hoja de datos )
| Número de pieza | FDMC8588 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMC8588
N-Channel PowerTrench® MOSFET
25 V, 40 A, 5.7 mΩ
Features
Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16.5 A
State-of-the-art switching performance
Lower output capacitance, gate resistance, and gate charge
boost efficiency
Shielded gate technology reduces switch node ringing and
increases immunity to EMI and cross conduction
RoHS Compliant
November 2014
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
High side switching for high end computing
High power density DC-DC synchronous buck converter
Top Bottom
S Pin 1
S
S
G
S
S
D
D
D
D
D
D
Power 33
S
G
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous (Package limited) TC = 25 °C
- Continuous (Silicon Limited) TC = 25 °C
- Continuous
- Pulsed
EAS
PD
TJ, TSTG
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5)
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±12
40
59
16.5
60
29
26
2.4
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
TC = 25 °C
TA = 25 °C
(Note 1a)
4.7
53
°C/W
Device Marking
08OD
Device
FDMC8588
Package
Power 33
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D4
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25°C unless otherwise noted
2 DUTY CYCLE-DESCENDING ORDER
1
0.1
0.01
1E-3
5E-4
10-4
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA = 125 oC/W
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-3
10-2
10-1
100
101
100
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
1000
©2012 Fairchild Semiconductor Corporation
FDMC8588 Rev.D4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet FDMC8588.PDF ] | |
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