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PDF FDMS030N06B Data sheet ( Hoja de datos )

Número de pieza FDMS030N06B
Descripción MOSFET ( Transistor )
Fabricantes Fairchild Semiconductor 
Logotipo Fairchild Semiconductor Logotipo



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No Preview Available ! FDMS030N06B Hoja de datos, Descripción, Manual

FDMS030N06B
N-Channel PowerTrench® MOSFET
60 V, 100 A, 3 mΩ
November 2013
Features
• RDS(on) = 2.4 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
Advanced Package
and High Efficiency
and
Silicon
Combination
for
Low
RDS(on)
• Fast Switching Speed
• 100% UIL Tested
• RoHS Compliant
Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advance PowerTrench® process that has
been tailored to minimize the on-state resistance while main-
taining superior switching performance.
Applications
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor drives and Uninterruptible Power Supplies
• Renewable system
Top Bottom
Pin 1
SS
S
G
D
DDD
Power 56
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TA = 25oC)
- Pulsed
Single Pulsed Avalanche Energy
Power Dissipation
(TC = 25oC)
(TA = 25oC)
Operating and Storage Temperature Range
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
(Note1)
(Note 2a)
(Note 3)
(Note 4)
(Note 2a)
FDMS030N06B
60
±20
100
22.1
400
248
104
2.5
-55 to +150
Unit
V
V
A
A
mJ
W
W
oC
(Note 2a)
FDMS030N06B
1.2
50
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
FDMS030N06B Rev. C1
1
www.fairchildsemi.com

1 page




FDMS030N06B pdf
Typical Performance Characteristics (Continued)
Figure 13. Transient Thermal Response Curve
2
1
0.5
0.2
0.1 0.1
0.05
0.01
0.02
0.01
Single pulse
01.E00-31
0.01
PDM
t1
t2
*Notes:
1. ZθJA(t) = 125oC/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.1 1 10
t1, RReeccttaanngguulalar rPPulusleseDuDruatriaotnio[nse[cs]ec]
100
1000
©2010 Fairchild Semiconductor Corporation
FDMS030N06B Rev. C1
5
www.fairchildsemi.com

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