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PDF FDMS4435BZ Data sheet ( Hoja de datos )
| Número de pieza | FDMS4435BZ | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDMS4435BZ
P-Channel PowerTrench® MOSFET
-30 V, -18 A, 20 mΩ
Features
Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -9.0 A
Max rDS(on) = 37 mΩ at VGS = -4.5 V, ID = -6.5 A
Extended VGSS range (-25 V) for battery applications
High performance trench technology for extremely low rDS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
High side in DC-DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 1a)
(Note 3)
(Note 1a)
2S
1S
Ratings
-30
±25
-18
-35
-9.0
-50
18
39
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
Device Marking
FDMS4435BZ
Device
FDMS4435BZ
Package
Power 56
(Note 1a)
3.2
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C4
1
www.fairchildsemi.com
1 page  
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
100
10
SINGLE PULSE
RθJA = 125 oC/W
1 TA = 25 oC
0.5
10-4
10-3
10-2
10-1
1
10
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
100
2
DUTY CYCLE-DESCENDING ORDER
1
D = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
PDM
0.01
SINGLE PULSE
RθJA = 125 oC/W
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
0.001
10-4
10-3
10-2
10-1
1
10 100
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
1000
1000
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C4
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FDMS4435BZ.PDF ] | |
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