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PDF BC807U Data sheet ( Hoja de datos )
| Número de pieza | BC807U | |
| Descripción | DUAL TRANSISTOR | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de BC807U (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC807U DUAL TRANSISTOR (PNP+PNP)
FEATURE
For AF input stages and drive applications
High hFE
Low VCE(sat)
Tow (galvanic) internal isolated transistors with good matching
in one package
MARKING: S5B
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RΘJA
TJ
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.5
0.3
417
150
-55～+150
SOT-363
Unit
V
V
V
A
W
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
VCE(sat) *
VBE(sat) *
Transition frequency
fT
Collector-base capacitance
Ccb
Emitter-base capacitance
Ceb
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Test conditions
IC=-10µA, IE=0
IC=-10mA, IB=0
IE=-10µA, IC=0
VCB=-25V, IE=0
VEB=-4V, IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-500mA
IC=-500mA, IB=-50mA
IC=-500mA, IB=-50mA
VCE=-5V,IC=-50mA,f=20MHz
VCB=-10V,f=1MHz
VEB=-0.5V,f=1MHz
Min Typ Max Unit
-50 V
-45 V
-5 V
-0.1 µA
-0.1 µA
160 400
40
-0.7 V
-1.2 V
200 MHz
10 pF
60 pF
www.cj-elec.com
1
B,Mar,2016
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BC807U.PDF ] | |
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