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PDF 12N65 Data sheet ( Hoja de datos )
| Número de pieza | 12N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | HAOHAI | |
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12A, 650V, N沟道 场效应晶体管 产品参数规格书
工业型号
FQP12N65C
FQPF12N65C
公司型号
H12N65P
H12N65F
通俗命名
12N65
H
HAOHAI
封装标识
P: TO-220AB
F: TO-220FP
包装方式
条管装
盒装箱装
每管数量
50Pcs
12N65 Series
N-Channel MOSFET
每盒数量
1000Pcs
每箱数量
5000Pcs
■Features
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge: 38nC(Typ.)
Extended Safe Operating Area
Lower RDS(ON): 0.67Ω(Typ.) @ VGS=10V
100% Avalanche Tested
Package: TO-220AB & TO-220F
ID=12A
BVDSS=650V
RDS(on)=0.67Ω
■特点
导通电阻低、开关速度快、驱动简单、可并联使用、输入阻抗高、符合RoHS规范
■应用范围
开关电源、LCD电源、LED驱动电源、机箱电源、UPS电源、
各种充电器、电子整流器、电子变压器、逆变器、控制器、转换器、
风扇控制板、以及电源适配器、汽车稳压器等线性放大和功率开关电路
■封装形式
TO-220P 或 TO-220AB（半塑封）
TO-220F 或 TO-220FP（全塑封）
12N65 Series Pin Assignment
3-Lead Plastic TO-220AB
Package Code: P
Pin 1: Gate
Pin 2 & Tab: Drain
Pin 3: Source
3-Lead Plastic TO-220FP
Package Code: F
Pin 1: Gate
Pin 2: Drain
Pin 3: Source
2D
Series Symbol: 1 G
3S
■ Absolute Maximum Ratings（TC=25℃ unless otherwise specified）
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current－Continuous (TC=25℃)
Drain Curren－Continuous (TC=100℃)
IDM Drain Current – Pulsed (Note 1)
VGS Gate-Source Voltage
EAS Single Pulsed Avalanche Energy (Note 2)
IAR Avalanche Current (Note 1)
EAR Repetitive Avalanche Energy (Note 1)
dv/dt
Peak Diode Recovery dv/dt (Note 3)
PD
Power Dissipation (TC=25℃)
Power Dissipation - Derate above 25℃
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
* Drain current limited by maximum junction temperature （ TO-220F ）
■ Thermal Resistance Characteristics
Symbol
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
TO-220AB
Typ.
Max.
-- 0.56
0.5 --
-- 62.5
Value
TO-220AB TO-220F
650 600
12 12*
7.4 7.4*
48 48*
±30 ±30
860 870
12 12
22.5 22.5
4.5 4.5
225 51
1.78 0.41
-50 ~ +150
300
TO-220F
Typ.
Max.
-- 2.43
-- --
-- 62.5
Units
V
A
V
mJ
A
mJ
V/ns
W
W/℃
℃
Units
℃/W
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
第1页 共7页
致力於中國功率器件優秀供應商
H12N65C-PF-BDB
1 page  
12A, 650V, N沟道 场效应晶体管 产品参数规格书
Fig-12. Gate Charge Test Circuit & Waveform
12N65 Series
N-Channel MOSFET
Fig-13. Resistive Switching Test Circuit & Waveforms
Fig-14. Unclamped Inductive Switching Test Circuit & Waveforms
Fig-15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
http://www.szhhe.com
HAOHAI ELECTRONICS CO., LTD.
第5页 共7页
致力於中國功率器件優秀供應商
H12N65C-PF-BDB
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet 12N65.PDF ] | |
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