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PDF D1716 Data sheet ( Hoja de datos )
| Número de pieza | D1716 | |
| Descripción | NPN Transistor - 2SD1716 | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1716
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 160V(Min.)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SB1161
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
12 A
ICP Collector Current-Pulse
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
20 A
120
W
3
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.cn
1
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet D1716.PDF ] | |
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