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PDF EPC2001 Data sheet ( Hoja de datos )

Número de pieza EPC2001
Descripción Enhancement Mode Power Transistor
Fabricantes EPC 
Logotipo EPC Logotipo



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No Preview Available ! EPC2001 Hoja de datos, Descripción, Manual

eGaN® FET DATASHEET
EPC2001 – Enhancement Mode Power Transistor
VDSS , 100 V
RDS(ON) , 7 mW
ID , 25 A
NEW PRODUCT
EPC2001
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag-
ing the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high elec-
tron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
Drain-to-Source Voltage (Continuous)
VDS Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
100
120
V
V
ID
Continuous (TA = 25˚C,θJA = 13)
Pulsed (25˚C, Tpulse = 300 µs)
25
100
A
VGS
Gate-to-Source Voltage
Gate-to-Source Voltage
6
-5
V
TJ Operating Temperature
TSTG Storage Temperature
-40 to 125
-40 to 150
˚C
PARAMETER
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS Drain-to-Source Voltage
IDSS Drain Source Leakage
IGSS
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
VGS(th)
RDS(ON)
Gate Threshold Voltage
Drain-Source On Resistance
TEST CONDITIONS
VGS = 0 V, ID = 300 µA
VDS = 80 V, VGS = 0 V
VGS = 5 V
VGS = -5 V
VDS = VGS, ID = 5 mA
VGS = 5 V, ID = 25 A
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
IS = 0.5 A, VGS = 0 V, T = 125˚C
All measurements were done with substrate shorted to source.
Thermal Characteristics
MIN
100
0.7
RθJC Thermal Resistance, Junction to Case
RθJB Thermal Resistance, Junction to Board
RθJA Thermal Resistance, Junction to Ambient (Note 1)
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
EPC2001 eGaN® FETs are supplied only in
passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
TYP MAX UNIT
V
100 250 µA
1
0.2
5
1
mA
1.4 2.5 V
5.6 7 mΩ
1.75
1.8
V
TYP
2.1 ˚C/W
15 ˚C/W
54 ˚C/W
| PAGE 1

1 page




EPC2001 pdf
eGaN® FET DATASHEET
TAPE AND REEL CONFIGURATION
4mm pitch, 12mm wide tape on 7”reel
7” reel
b
ac
de
fg
EPC2001
Loaded Tape Feed Direction
Die
orientation
dot
Gate
solder bar is
under this
corner
Dimension (mm)
a
b
c (note 2)
d
e
f (note 2)
g
EPC2001 (note 1)
target min max
12.0 11.7 12.3
1.75 1.65 1.85
5.50 5.45 5.55
4.00 3.90 4.10
4.00 3.90 4.10
2.00 1.95 2.05
1.5 1.5 1.6
Die is placed into pocket
solder bar side down
(face side down)
Note 1: MSL1 (moisture sensitivity level 1) classi ed according to IPC/JEDEC industry standard.
Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket,
not the pocket hole.
DIE MARKINGS
Die orientation dot
Gate Pad solder bar
is under this corner
2001
YYYY
ZZZZ
Part
Number
EPC2001
Part #
Marking Line 1
2001
Laser Markings
Lot_Date Code
Marking line 2
YYYY
Lot_Date Code
Marking Line 3
ZZZZ
DIE OUTLINE
Solder Bar View
A
ff
X9
2 3 4 5 6 7 8 9 10 11
Side View
1
eg
g
X8
DIM   MICROMETERS  
MIN   Nominal   MAX  
A   4075  
4105  
4135  
B   1602  
1632  
1662  
c   1379  
1382  
1385  
d   577   580   583  
e   235   250   265  
f   195   200   205  
g   400   400   400  
SEATING PLANE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 5

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