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PDF IRFP4768PbF Data sheet ( Hoja de datos )
| Número de pieza | IRFP4768PbF | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Application
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
IRFP4768PbF
HEXFET® Power MOSFET
D VDSS 250V
RDS(on) typ.
14.5m
max 17.5m
ID
S
93A
D
G DS
TO-247AC
G
Gate
D
Drain
S
Source
Base part number Package Type
IRFP4768PbF
TO-247AC
Standard Pack
Form
Quantity
Tube
25
Orderable Part Number
IRFP4768PbF
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
Thermal Resistance
Parameter
RJC Junction-to-Case
RCS
Case-to-Sink, Flat Greased Surface
RJA Junction-to-Ambient
Max.
93
66
370
520
3.4
± 20
24
-55 to + 175
300
10 lbf·in (1.1 N·m)
Units
A
W
W/°C
V
V/ns
°C
770
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
1 2016-12-12
1 page  
1
IRFP4768PbF
0.1
0.01
0.001
D = 0.50
0.20
0.10
0.05
0.02
0.01
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3 Ri (°C/W) I (sec)
CC 0.0634 0.000278
33 0.1109 0.005836
0.1148 0.053606
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
Duty Cycle = Single Pulse
0.01
10 0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14. Typical Avalanche Current vs. Pulse
800
TOP Single Pulse
Notes on Repetitive Avalanche Curves , Figures 14, 15:
700
BOTTOM 1.0% Duty Cycle
ID = 56A
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far
600 in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as Tjmax is not exceeded.
500 3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
400 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
300 6. Iav = Allowable avalanche current.
7. T=Allowable rise in junction temperature, not to exceed Tjmax (assumed as
200
25°C in Figure 14, 15).
tav = Average time in avalanche.
100
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 15. Maximum Avalanche Energy vs. Temperature
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
5 2016-12-12
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFP4768PbF.PDF ] | |
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