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PDF A1SHB Data sheet ( Hoja de datos )
| Número de pieza | A1SHB | |
| Descripción | P-Channel Trench Power MOSFET | |
| Fabricantes | H&M Semiconductor | |
| Logotipo |  |
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P-Channel Trench Power MOSFET
General Description
The HM2301B uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as -2.5V. This device is suitable for use as a
battery protection or in other switching application.
HM2301B
Features
● VDS = -20V,ID =-2.5A
RDS(ON) < 160mΩ @ VGS =-4.5V
RDS(ON) < 230mΩ @ VGS =-2.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
● Battery protection
● Load switch
● Power management
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
HM2301B
SOT-23
Reel Size
Ø180mm
Table 1. Absolute Maximum Ratings (TA=25℃)
Symbol
Parameter
VDS Drain-Source Voltage (VGS=0V）
VGS Gate-Source Voltage (VDS=0V)
ID
IDM (pluse)
Drain Current-Continuous
Drain Current-Continuous@ Current-Pulsed (Note 1)
PD Maximum Power Dissipation
TJ,TSTG
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
Table 2. Thermal Characteristic
Symbol
Parameter
RJA
Thermal Resistance, Junction-to-Ambient
Schematic Diagram
SOT-23 top view
Tape width
8mm
Quantity
3000units
Value
-20
±12
-2.5
-10
1
-55 To 150
Unit
V
V
A
A
W
℃
Value
125
Unit
℃/W
-1-
1 page  
HM2301B
Figure11. Normalized Maximum Transient Thermal Impedance
Square Wave Pluse Duration(sec)
SOT-23 Package Information
-5-
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet A1SHB.PDF ] | |
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