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Número de pieza | FSM75N75 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | FOSLINK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de FSM75N75 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FEATURES
Part No
VD S S
(at Tj(max))
RD S ( o n )
FSM75N75 75V
<0.011Ω
z Exceptional dv/dt capability
z 100% avalanche tested
z Low intrinsic capacitances
ADVANTAGES
z Easy to mount
z Space savings
z High power density
ID
80A
FSM75N75
GENERAL DESCRIPTION
This Power MOSFET series has specifically been
designed to minimize input capacitance and gate
charge. It is therefore suitable as primary switch in
advanced high-efficiency, high-frequency isolated
DC-DC converters for Telecom and Computer
applications. It is also intended for any applications
with low gate drive requirements.
APPLICATIONS
z DC motor control
z Solenoid and relay drivers
z DC-DC Converters
z Automotive environment
INTERNAL SCHEMATIC DIAGRAM AND EXTERIOR
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDSS
VGS
ID
TJ = 25°C to 150°C
Continuous
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
IDM Drain current (pulsed with limited by TJM) at TC = 25°C
TJ = 25°C
PD Derating Factor
dv/dt
EAS
Peak diode recovery voltage slope
(ISD≤80A, di/dt≤300A/µs, VDD≤V(BR)DSS, TJ≤TJMAX)
TJ = 25°C, ID = 40A, VDD= 38V
TJ Max operating junction temperature
Tstg Storage temperature
1/9
Rating
75
± 20
80
65
320
200
1.5
15
700
160
Unit
V
V
A
A
W
W/°C
V/ns
mJ
°C
-55 to 160
°C
2007-7-27
1 page TEST CIRCUITS
N-CHANNEL 75V 0.0097Ω 80A POWER MOSFET
FSM75N75
Gate Charge Test Circuit and Waveform
Resistive switch Test Circuit and Waveform
UIS Test Circuit and Waveform
5/9 2007-7-27
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet FSM75N75.PDF ] |
Número de pieza | Descripción | Fabricantes |
FSM75N75 | N-CHANNEL POWER MOSFET | FOSLINK |
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