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PDF SEMiX703GAR126HDs Datasheet ( Hoja de datos )

Número de pieza SEMiX703GAR126HDs
Descripción IGBT Modules
Fabricantes Semikron International 
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SEMiX703GAR126HDs Hoja de datos, Descripción, Manual
SEMiX703GAR126HDs
SEMiX®3s
Trench IGBT Modules
SEMiX703GAR126HDs
Preliminary Data
Features
• Homogeneous Si
• Trench = Trenchgate technology
• VCE(sat) with positive temperature
coefficient
• High short circuit capability
• UL recognised file no. E63532
Typical Applications
• AC inverter drives
• UPS
• Electronic Welding
Remarks
• Case temperatur limited to TC=125°C
max.
• Not for new design
GAR
© by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES
IC
ICRM
VGES
tpsc
Tj
Tj = 150°C
ICRM = 2xICnom
VCC = 600V
VGE 20V
Tj = 125°C
VCES 1200V
Tc = 25°C
Tc = 80°C
Inverse diode
IF
Tj = 150°C
Tc = 25°C
Tc = 80°C
IFRM
IFRM = 2xIFnom
IFSM tp = 10ms, half sine wave, Tj = 25°C
Tj
Freewheeling diode
IF
Tj = 150°C
Tc = 25°C
Tc = 80°C
IFRM
IFRM = 2xIFnom
IFSM tp = 10ms, half sine wave, Tj = 25°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 60s
Characteristics
Symbol Conditions
IGBT
VCE(sat)
VCE0
rCE
VGE(th)
ICES
Cies
Coes
Cres
QG
RGint
td(on)
tr
Eon
td(off)
tf
Eoff
Rth(j-c)
ICnom = 450A
VGE = 15V
chiplevel
Tj = 25°C
Tj = 125°C
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
VGE=VCE, IC = 18mA
VGE = 0V
VCE = 1200V
Tj = 25°C
Tj = 125°C
VCE = 25V
VGE = 0V
f = 1MHz
f = 1MHz
f = 1MHz
VGE = - 8 V...+ 15 V
Tj = 25°C
VCC = 600V
ICnom = 450A
Tj = 125°C
RG on = 1.6
RG off = 1.6
per IGBT
03.04.2008
Values
1200
642
449
900
-20 ... 20
10
-40 ... 150
561
384
900
2900
-40 ... 150
561
384
900
2900
-40 ... 150
600
-40 ... 125
4000
Unit
V
A
A
A
V
µs
°C
A
A
A
A
°C
A
A
A
A
°C
A
°C
V
min.
5
typ.
1.7
2.00
1
0.9
1.6
2.4
5.8
0.1
32.3
1.69
1.46
3600
1.67
310
60
32
680
135
68
max. Unit
2.1
2.45
1.2
1.1
2.0
3.0
6.5
0.3
0.061
V
V
V
V
m
m
V
mA
mA
nF
nF
nF
nC
ns
ns
mJ
ns
ns
mJ
K/W
1

1 page

SEMiX703GAR126HDs pdf
SEMiX703GAR126HDs
SEMiX 3s
GAR
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or
implied is made regarding delivery, performance or suitability.
© by SEMIKRON
03.04.2008
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