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PDF FGF65A3L Data sheet ( Hoja de datos )
| Número de pieza | FGF65A3L | |
| Descripción | Trench Field Stop IGBT | |
| Fabricantes | Sanken | |
| Logotipo |  |
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VCE = 650 V, IC = 30 A
Trench Field Stop IGBTs with Fast Recovery Diode
KGF65A3L, MGF65A3L, FGF65A3L
Data Sheet
Description
KGF65A3L, MGF65A3L, and FGF65A3L are 650 V
Field Stop IGBTs. Sanken original trench structure
decreases gate capacitance, and achieves low saturation
voltage and switching losses reduction. Thus, Field Stop
IGBTs can improve the efficiency of your circuit.
Features
● Low Saturation Voltage
● High Speed Switching
● With Integrated Fast Recovery Diode
● RoHS Compliant
● VCE ------------------------------------------------------ 650 V
● IC (TC = 100 °C) ----------------------------------------- 30 A
● Short Circuit Withstand Time -------------------------5 μs
● VCE(sat)-----------------------------------------------1.6 V typ.
● tf (TJ = 175 °C) ---------------------------------- 160 ns typ.
● VF----------------------------------------------------1.6 V typ.
Applications
● Uninterruptible Power Supply (UPS)
● Inverter Circuit
● Bridge Circuit
Package
TO247-3L
(1) (2) (3)
TO3PF-3L
(1) (2) (3)
(1)
TO3P-3L
(4)
(1) (2) (3)
(2)(4)
(1) Gate
(2) Collector
(3) Emitter
(4) Collector
(3)
(4)
Selection Guide
Part Number
KGF65A3L
MGF65A3L
FGF65A3L
Not to scale
Package
TO247-3L
TO3P-3L
TO3PF-3L
xGF65A3L-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Oct. 03, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
1
1 page  
KGF65A3L, MGF65A3L, FGF65A3L
Rating and Characteristic Curves
1000
10 μs
100
100 μs
10
1000
100
10
10 μs
100 μs
1 IGBT
Single Pulse
TJ = 25 °C
0.1
1
10 100 1000
Collector-Emitter Voltage, VCE (V)
Figure 2. IGBT Reverse Bias Safe Operating Area
300
250
200
150
100
TO3P-3L,
TO247-3L
50 TJ < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, TC (°C)
Figure 4. Power Dissipation vs. Case Temperature
1 IGBT
Single Pulse
TJ = 25 °C
0.1
1
10 100 1000
Collector-Emitter Voltage, VCE (V)
Figure 3. IGBT Safe Operating Area
100
80
60
40
20 TO3PF-3L
TJ < 175 °C
0
25 50 75 100 125 150 175
Case Temperature, TC (°C)
Figure 5. Power Dissipation vs. Case Temperature
xGF65A3L-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Oct. 03, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
5
5 Page 
KGF65A3L, MGF65A3L, FGF65A3L
3
2
IF = 60A
IF = 30A
1
IF = 10A
0
-50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C)
Figure 26. Diode Forward Voltage vs. Junction
Temperature
3.0
Inductive load
VR = 400 V
2.5 IF = 30 A
2.0
TJ = 175 °C
1.5
1.0
TJ = 25 °C
0.5
0.0
300 400 500 600 700 800 900
di/dt (A/μs)
Figure 28. Diode Reverse Recovery Charge vs.
di/dt
160
140
TJ = 175 °C
120
Inductive load
VR = 400 V
IF = 30 A
100
80
60 TJ = 25 °C
40
300 400 500 600 700 800 900
di/dt (A/μs)
Figure 27. Emitter to Collector Diode Reverse
Recovery Time vs. di/dt
30
TJ = 175 °C
25
20
15 TJ = 25 °C
10
Inductive load
5 VR = 400 V
IF = 30 A
0
300 400 500 600 700 800 900
di/dt (A/µs)
Figure 29. Recovery Current vs. di/dt
xGF65A3L-DSE Rev.1.0
SANKEN ELCTRIC CO., LTD.
Oct. 03, 2016
http://www.sanken-ele.co.jp/en
© SANKEN ELECTRIC CO., LTD. 2016
11
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet FGF65A3L.PDF ] | |
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