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PDF CJPF10N65 Data sheet ( Hoja de datos )
| Número de pieza | CJPF10N65 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF10N65
V(BR)DSS
650V
N-Channel Power MOSFET
RDS(on)MAX
1.0Ω@10V
ID
10A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
TO-220F
1. GATE
2. DRAIN
3. SOURCE
123
FEATURE
z High Current Rating
z Low Gate Charge
z Lower RDS(on)
z Low Reverse Transfer Capacitance
z Fast Switching Capability
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPFN6
XXX
CJPF10N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Single Pulsed Avalanche Energy (note2)
Thermal Resistance from Junction to Ambient
Junction and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
Value
650
±30
10
40
500
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
C,May,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJPF10N65.PDF ] | |
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