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PDF CJPF04N60 Data sheet ( Hoja de datos )

Número de pieza CJPF04N60
Descripción N-Channel MOSFET
Fabricantes JCET 
Logotipo JCET Logotipo



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No Preview Available ! CJPF04N60 Hoja de datos, Descripción, Manual

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
  3Ω@10V
ID
4A
TO-220F
 
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF04N60
XXX
CJPF04N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
123
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
62.5
-55 ~+150
260
Unit
V
A
mJ
/W
www.cj-elec.com
1
G,May,2016

1 page





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