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PDF CJP50N06 Data sheet ( Hoja de datos )
| Número de pieza | CJP50N06 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJP50N06 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP50N06
V(BR)DSS
60V
N-Channel Power MOSFET
RDS(on)MAX
20mΩ@10V
ID
50A
TO-220-3L-C
GENERAL DESCRIPTION
The CJP50N06 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURE
z High density cell design for ultra low Rdson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
1. GATE
2. DRAIN
3. SOURCE
MARKING
EQUIVALENT CIRCUIT
123
CJP50N06
XXX
GD S
CJP50N06= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Single Pulsed Avalanche Energy*
EAS
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
Tstg
*EAS condition: Tj=25℃,VDD=50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
Va lue
60
±20
50
220
115
2
62.5
150
-50 ~+150
Unit
V
A
mJ
W
℃/W
℃
www.cj-elec.com
1
A-3,Apr,2016
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CJP50N06.PDF ] | |
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