(PDF) CJL8810 Datasheet - Dual N-Channel MOSFET

Número de pieza	CJL8810
Descripción	Dual N-Channel MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-6L Plastic-Encapsulate MOSFETS CJL8810 Dual N-Channel MOSFET SOT-23-6L DESCRIPTION The CJL8810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch,facilitated by its common-drain configuration. MARKING: MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) Repetitive rating：Pluse width limited by junction temperature. Symbol VDS VGS ID IDM RθJA Tj Tstg TL Value 20 ±12 7 30 83.3 150 -55~+150 260 Unit V V A A ℃/W ℃ ℃ ℃ D,Dec,2013 1 page

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PDF CJL8810 Data sheet ( Hoja de datos )