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Número de pieza | CJL3443 | |
Descripción | P-Channel MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJL3443 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-6L Plastic-Encapsulate MOSFETS
CJL3443 P-Channel 20-V(D-S) MOSFET
FEATURE
z Fast Switching Speed
z Low Gate Charge
z High Performance Trench Technology for extremely Low RDS(on)
SOT-23-6L
1. GATE
2. DRAIN
3. SOURCE
Description
This P-Channel MOSFET is produced using advanced PowerTrench
process that has been especially tailored to minimize on-state resistance
and yet maintain low gate charge for superior switching performance.
These devices have been designed to offer exceptional power dissipation
In a very small footprint for applications where the larger packages are impractical.
D
D
G
16
25
34
MARKING:
D
D
S
R43
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Continuous Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
RθJA
Tj
Tstg
Value
-20
±8
-4
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
A,Dec,2010
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet CJL3443.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJL3443 | P-Channel MOSFET | JCET |
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