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Número de pieza | IRL7472L1TRPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRL7472L1TRPbF (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
No Preview Available ! Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
Benefits
Optimized for Logic Level Drive
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dv/dt and di/dt Capability
Lead-Free, RoHS Compliant
StrongIRFET™
IRL7472L1TRPbF
DirectFET® N-Channel Power MOSFET
VDSS
RDS(on) typ.
max
@ VGS = 10V
RDS(on) typ.
max
@ VGS = 4.5V
ID (Package Limited)
40V
0.34m
0.45m
0.52m
0.70m
375A
D
S
S
S
G
S
L8
S
S
D
S
S
DirectFET™ ISOMETRIC
Base part number
Package Type
IRL7472L1PbF Direct FET Large Can (L8)
Standard Pack
Form
Quantity
Tape and Reel
4000
Orderable Part Number
IRL7472L1TRPbF
1.6
ID = 195A
1.4
1.2
1.0
0.8 TJ = 125°C
0.6
0.4
0.2 TJ = 25°C
0.0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
700
600 Limited by package
500
400
300
200
100
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016-8-9
1 page 10000
1000
IRL7472L1TRPbF
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
TJ = 175°C
100
TJ = 25°C
100
Limited by Package
10
1msec
10
1.0
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
Fig 9. Typical Source-Drain Diode Forward Voltage
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
50
Id = 5.0mA
49
48
47
46
45
44
43
42
41
-60
-20 20 60 100 140
TJ , Temperature ( °C )
180
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-5 0 5 10 15 20 25 30 35 40
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
1.8
Vgs = 3.5V
1.6 Vgs = 4.0V
Vgs = 4.5V
1.4 Vgs = 5.5V
Vgs = 6.0V
1.2 Vgs = 8.0V
Vgs = 10V
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5 2016-8-9
5 Page DirectFET® Tape & Reel Dimension (Showing component orientation).
IRL7472L1TRPbF
LOADED TAPE FEED DIRECTION
+
NOTE: Controlling dimensions in mm
Std reel quantity is 4000 parts. Order as IRF7472L1TRPBF).
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
METRIC
IMPERIAL
CODE MIN MAX MIN MAX
A 330.00 N.C 12.992 N.C
B 20.20 N.C 0.795 N.C
C 12.80 13.20 0.504 0.520
D 1.50 N.C 0.059 N.C
E 99.00 100.00 3.900 3.940
F N.C 22.40 N.C 0.880
G 16.40 18.40 0.650 0.720
H 15.90 19.40 0.630 0.760
NOTE: CONTROLLING
DIMENSIONS IN MM
CODE
A
B
C
D
E
F
G
H
DIMENSIONS
METRIC
IMPERIAL
MIN MAX MIN MAX
11.90 12.10 4.69 0.476
3.90 4.10 0.154 0.161
15.90 16.30 0.623 0.642
7.40 7.60 0.291 0.299
7.20 7.40 0.283 0.291
9.90 10.10 0.390 0.398
1.50 N.C 0.059 N.C
1.50 1.60 0.059 0.063
Note: For the most current drawing please refer to IR webite at http://www.irf.com/package/
Qualification Information
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
Industrial *
(per JEDEC JESD47F† guidelines)
DFET (L-CAN)
MSL1
(per JEDEC J-STD-020D†)
Yes
† Applicable version of JEDEC standard at the time of product release.
* Industrial qualification standards except autoclave test conditions.
11 2016-8-9
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet IRL7472L1TRPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRL7472L1TRPbF | Power MOSFET ( Transistor ) | Infineon |
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