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Número de pieza | IRF9530NLPbF | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | Infineon | |
Logotipo | ||
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No Preview Available ! IRF9530NSPbF
IRF9530NLPbF
Benefits
Advanced Process Technology
Surface Mount (IRF9530NS)
Low-profile through-hole(IRF9530NL)
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF9530NL) is available for low-
profile applications.
HEXFET® Power MOSFET
VDSS
RDS(on)
ID
-100V
0.20
-14A
DD
S
G
D2 Pak
IRF9530NSPbF
S
GD
TO-262 Pak
IRF9530NLPbF
G
Gate
D
Drain
S
Source
Base part number
IRF9530NLPbF
IRF9530NSPbF
Package Type
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRF9530NLPbF (Obsolete)
IRF9530NSTRLPbF
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ -10V
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
EAS Single Pulse Avalanche Energy (Thermally Limited)
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case
RJA Junction-to-Ambient ( PCB Mount, steady state)
Max.
-14
-10
-56
3.8
79
0.53
± 20
250
-8.4
7.9
-5.0
-55 to + 175
300
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
1.9
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1 2016-5-27
1 page IRF9530NS/LPbF
Fig 10a. Switching Time Test Circuit
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5 2016-5-27
5 Page IRF9530NS/LPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Moisture Sensitivity Level
D2-Pak
MSL1
(per JEDEC J-STD-020D) ††
RoHS Compliant
TO-262
N/A
Yes
† Qualification standards can be found at Infineon’s web site www.infineon.com
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
5/27/2016
Comments
Updated datasheet with corporate template.
Added disclaimer on last page.
TO-262 package was removed from ordering information since it is EOL on page 1.
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU‐ConvertIR™, AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI‐POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, GaNpowIR™,
HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my‐d™, NovalithIC™, OPTIGA™,
Op MOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO‐SIL™, RASIC™, REAL3™, SmartLEWIS™, SOLID FLASH™,
SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respec ve owners.
Edi on 2016‐04‐19
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2016 Infineon Technologies AG.
All Rights Reserved.
Do you have a ques on about this
document?
Email: erratum@infineon.com
Document reference
ifx1
IMPORTANT NOTICE
The informa on given in this document shall in no
event be regarded as a guarantee of condi ons or
characteris cs (“Beschaffenheitsgaran e”) .
With respect to any examples, hints or any typical
values stated herein and/or any informa on
regarding the applica on of the product, Infineon
Technologies hereby disclaims any and all
warran es and liabili es of any kind, including
without limita on warran es of non‐infringement
of intellectual property rights of any third party.
In addi on, any informa on given in this document
is subject to customer’s compliance with its
obliga ons stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applica ons.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended applica on and the completeness of the
product informa on given in this document with
respect to such applica on.
For further informa on on the product, technology,
delivery terms and condi ons and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
Please note that this product is not qualified
according to the AEC Q100 or AEC Q101 documents
of the Automo ve Electronics Council.
WARNINGS
Due to technical requirements products may
contain dangerous substances. For informa on on
the types in ques on please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a wri en document signed by
authorized representa ves of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applica ons where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.
11
2016-5-27
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet IRF9530NLPbF.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF9530NLPbF | Power MOSFET ( Transistor ) | Infineon |
IRF9530NLPBF | (IRF9530NLPBF / IRF9530NSPBF) Advanced Process Technology Surface Mount | International Rectifier |
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