DataSheet.es    


PDF IRF6894MPbF Data sheet ( Hoja de datos )

Número de pieza IRF6894MPbF
Descripción Power MOSFET ( Transistor )
Fabricantes Infineon 
Logotipo Infineon Logotipo



Hay una vista previa y un enlace de descarga de IRF6894MPbF (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! IRF6894MPbF Hoja de datos, Descripción, Manual

IRF6894MPbF
IRF6894MTRPbF
HEXFET® Power MOSFET plus Schottky Diode
RoHs Compliant Containing No Lead and Bromide 
Typical values (unless otherwise specified)
Integrated Monolithic Schottky Diode
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
VDSS
VGS
25V min ±16V max
RDS(on)
0.9m@ 10V
RDS(on)
1.4m@ 4.5V
Low Package Inductance
Optimized for High Frequency Switching
Qg tot Qgd
Qgs2
Qrr
Qoss
Vgs(th)
Ideal for CPU Core DC-DC Converters
31nC 10nC 3.0nC 58nC 33nC
1.6V
Optimized for Sync. FET socket of Sync. Buck Converter
Low Conduction and Switching Losses
  
Compatible with existing Surface Mount Techniques
100% Rg tested
S
Footprint compatible to DirectFET
DG
D
S
Applicable DirectFETOutline and Substrate Outline (see p.7,8 for details)  
DirectFETISOMETRIC
MX
SQ SX ST
MQ MX MT MP
Description
The IRF6894MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETpackaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFETpackage is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFETpackage allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6894MPbF balances industry leading on-state resistance while minimizing gate charge along with low gate resistance to reduce
both conduction and switching losses. This part contains an integrated Schottky diode to reduce the Qrr of the body drain diode further
reducing the losses in a Synchronous Buck circuit. The reduced losses make this product ideal for high frequency/high efficiency DC-DC
converters that power high current loads such as the latest generation of microprocessors. The IRF6894MPbF has been optimized for
parameters that are critical in synchronous buck converter’s Sync FET sockets.
Base part number  
IRF6894MTRPbF
Package Type  
DirectFET® Medium Can
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number
IRF6894MTRPbF
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current
Single Pulse Avalanche Energy
IAR Avalanche Current
Max.
25
±16
37
29
163
296
540
30
Units
V 
A 
mJ
A
4.0
ID = 37A
3.0
2.0 TJ = 125°C
1.0
0.0
2
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
14
12 ID= 30A
10
8
VDS= 20V
VDS= 13V
VDS= 5V
6
4
2
0
0 10 20 30 40 50 60 70 80 90
QG Total Gate Charge (nC)
Fig 1. Typical On-Resistance vs. Gate Voltage
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFETWebsite.
Surface mounted on 1 in. square Cu board, steady state.
1
Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage
 TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.2mH, RG = 50, IAS = 30A.
2016-10-13

1 page




IRF6894MPbF pdf
  IRF6894MTRPbF
1000
100
10000
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10msec 1msec
10
1
0.1
TJ = 150°C
TJ = 25°C
TJ = -40°C
VGS = 0V
0.4 0.7
VSD, Source-to-Drain Voltage (V)
1.0
10
1
0.1 TA = 25°C
Tj = 150°C
Single Pulse
0.01
0.0 0.1
DC
1.0 10.0
VDS , Drain-toSource Voltage (V)
100.0
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
180
160
140
120
100
80
60
40
20
0
25
50 75 100 125
TC , Case Temperature (°C)
150
2.5
2.0 ID = 10mA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
2500
2000
1500
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID
TOP 2.0A
3.0A
BOTTOM 30A
1000
500
0
25
50 75 100 125 150
Starting TJ , Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
5 2016-10-13

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet IRF6894MPbF.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRF6894MPbFPower MOSFET ( Transistor )Infineon
Infineon
IRF6894MPBFPower MOSFET ( Transistor )International Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar