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PDF IRF6218S Data sheet ( Hoja de datos )

Número de pieza IRF6218S
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRF6218S Hoja de datos, Descripción, Manual

Applications
l Reset Switch for Active Clamp
Reset DC-DC converters
SMPS MOSFET
PD - 95863
IRF6218S
IRF6218L
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
:-150V 150m @VGS = -10V -27A
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
G
D
D2Pak
TO-262
S IRF6218S IRF6218L
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS Gate-to-Source Voltage
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
cIDM Pulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
dv/dt
TJ
TSTG
Linear Derating Factor
hPeak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
RθJA
ghJunction-to-Ambient (PCB Mounted, steady state)
Max.
-150
± 20
-27
-19
-110
250
1.6
8.2
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
0.61
40
Units
V
A
W
W/°C
V/ns
°C
Units
°C/W
Notes  through † are on page 9
www.irf.com
1
4/22/04

1 page




IRF6218S pdf
IRF6218S/L
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Ambient Temperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ VDD
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01 0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R1R1
Ci= τi/Ri
Ci= i/Ri
R2R2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτ 0.264 0.000285
τ3τ3 0.206 0.001867
0.140 0.013518
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
t1 , Rectangular Pulse Duration (sec)
0.1
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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