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PDF IPU80R2K8CE Data sheet ( Hoja de datos )

Número de pieza IPU80R2K8CE
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
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No Preview Available ! IPU80R2K8CE Hoja de datos, Descripción, Manual

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CE
800VCoolMOS™CEPowerTransistor
IPx80R2K8CE
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket

1 page




IPU80R2K8CE pdf
800VCoolMOS™CEPowerTransistor
IPD80R2K8CE,IPU80R2K8CE
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related 1)
Ciss
Coss
Co(er)
Effective
2)
output
capacitance,
time
related
Co(tr)
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
800
2.1
-
-
-
-
-
-
Values
Typ. Max.
--
3 3.9
-5
25 -
- 100
2.4 2.8
6.5 -
1.2 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V VDS=VGS,ID=0.12mA
µA VVDDSS==880000VV,,VVGGSS==00VV,,TTjj==12550°C°C
nA VGS=20V,VDS=0V
VVGGSS==1100VV,,IIDD==11..11AA,,TTjj==12550°C°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
290 -
13 -
11 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=0...480V
- 26 - pF ID=constant,VGS=0V,VDS=0...480V
- 25 - ns RVDGD==44700V,VGS=0/10V,ID=1.9A,
- 15 - ns RVDGD==44700V,VGS=0/10V,ID=1.9A,
- 72 - ns RVDGD==44700V,VGS=0/10V,ID=1.9A,
- 18 - ns RVDGD==44700V,VGS=10V,ID=1.9A,
Min.
-
-
-
-
Values
Typ. Max.
1.5 -
6-
12 -
5.5 -
Unit Note/TestCondition
nC VDD=640V,ID=1.9A,VGS=0to10V
nC VDD=640V,ID=1.9A,VGS=0to10V
nC VDD=640V,ID=1.9A,VGS=0to10V
V VDD=640V,ID=1.9A,VGS=0to10V
12))CCoo((etrr))iissaaffiixxeeddccaappaacciittaanncceetthhaattggiivveesstthheessaammeecshtoarregdinegnteimrgeyaassCCoosssswwhhilieleVVDDSSisisrrisisininggfrfroomm00toto8800%%VV(B(BRR)D)DSSSS
Final Data Sheet
5 Rev.2.2,2016-04-12

5 Page





IPU80R2K8CE arduino
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
800VCoolMOS™CEPowerTransistor
IPD80R2K8CE,IPU80R2K8CE
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt trr =tF +tS
Qrr = QF + QS
Table9Switchingtimes
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VD
VDS
ID
VDS
Final Data Sheet
11 Rev.2.2,2016-04-12

11 Page







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