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PDF CJV0160 Data sheet ( Hoja de datos )

Número de pieza CJV0160
Descripción N-Channel Power MOSFET / Transistor
Fabricantes Zhaoxingwei Electronics 
Logotipo Zhaoxingwei Electronics Logotipo



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No Preview Available ! CJV0160 Hoja de datos, Descripción, Manual

SMD Type                                          
Mosfets
CJV0160 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
TO-92
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
z Diode is Characterized for Use in Bridge Circuits
z IDSS and VDS(on) Specified at Elevated Temperature
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM
Power Dissipation
PD
Single Pulsed Avalanche Energy*
EAS
Thermal Resistance from Junction to Ambient
RthJA
Junction Temperature
TJ
Storage Temperature
Tstg
*EAS condition: Tj=25,VDD=100V,VGS=10V,L=10mH,IAS=2A,RG=25
Value
600
±30
1
9
0.625
20
200
150
-50 ~+150
Unit
V
A
W
mJ
/W

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