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PDF CJV01N65B Data sheet ( Hoja de datos )
| Número de pieza | CJV01N65B | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate MOSFETS
CJV01N65B
V(BR)DSS
650 V
N-Channel Power MOSFET
RDS(on)MAX
14 Ω@ 10V
ID
1A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-92
1. GATE
2. DRAIN
3. SOURCE
MARKING
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
PD
RθJA
TJ, TSTG
TL
www.cj-elec.com
1
Value
650
±20
1
4
5
625
200
-55 ~+150
260
Unit
V
A
mJ
mW
℃/W
℃
B,Aug,2016
1 page  
TO-92 7DSHDQG5HHO
ZZZFMHOHFFRP5 D,Aug,2016
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJV01N65B.PDF ] | |
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