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PDF CJU60N08 Data sheet ( Hoja de datos )
| Número de pieza | CJU60N08 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJU60N08 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU60N08
V(BR)DSS
N-Channel Power MOSFET
RDS(on)MAX
ID
80V
8.5mΩ@10V
60A
GENERAL DESCRIPTION
The CJU60N08 uses advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of
applications.
TO-252-2L(4R)
1. GATE
2
2. DRAIN
1
3. SOURCE
3
FEATURE
VDS =80V,ID =60A
RDS(ON) < 8.5mΩ @ VGS=10V
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
High density cell design for ultra low Rdson
Special process technology for high ESD capability
Fully characterized avalanche voltage and current
MARKING
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
EQUIV ALENT CIRCUIT
CJU60N08
XXX
CJU60N08= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Code
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
80
±20
60
240
300
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-1,Nov,2016
1 page  
TO-252(4R)-2L Tape and Reel
www.cj-elec.com
A-1,Nov,2016
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet CJU60N08.PDF ] | |
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