(PDF) CJT04N15 Datasheet - N-Channel Power MOSFET / Transistor

Número de pieza	CJT04N15
Descripción	N-Channel Power MOSFET / Transistor
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate MOSFETS CJT04N15 V(BR)DSS 150V N-Channel Power MOSFET RDS(on)MAX 160mΩ@10V ID 4A GENERAL DESCRIPTION This CJT04N15 use advanced trench technology and design to provide excellent RDS(ON) with low gate charge.It can be used in a wide variety of applications. SOT-223 1. GATE 2. DRAIN 3. SOURCE 12 3 FEATURE z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Excellent package for good heat dissipation MARKING T04N15 151 T04N15= Device code 151 =Code EQUIVALENT CIRCUIT Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM RθJA TJ TSTG TL Value 150 ±20 4 16 125 150 -55 ~+150 260 Unit V A ℃/W ℃ www.cj-elec.com 1 A-2,May,2016 1 page SOT-223 Tape and Reel www.cj-elec.com 5 A-2,May,2016 5 Page

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PDF CJT04N15 Data sheet ( Hoja de datos )