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PDF CJP85N80 Datasheet ( Hoja de datos )

Número de pieza CJP85N80
Descripción N-Channel Power MOSFET
Fabricantes JCET 
Logotipo JCET Logotipo

Total 4 Páginas
		
CJP85N80 Hoja de datos, Descripción, Manual
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP85N80 N-Channel Power MOSFET
V(BR)DSS
85V
RDS(on)MAX
  8.5mΩ@10V
ID
80A
DESCRIPTION
The CJP85N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS .This device is suitable for use in PWM,
load switching and general purpose applications.
TO-220-3L-C
1. GATE
2. DRAIN
FEATURE
Advanced trench process technology
Special designed for convertors and power controls
High density cell design for ultra low RDS(on)
Fully characterized avalanche voltage and current
Fast switching
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
3. SOURCE 1 2 3
APPLICATION
Power switching application
Hard switched and high frequency circuits
Uninterruptible power supply
MARKING
EQUIV ALENT CIRCUIT
CJP85N80
YY
CJP85N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
YY = Code
Maximum ratings (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current (note 1)
IDM
Power Dissipation
Maximum Power Dissipation
(note 2 , Ta=25)
(note 3 , Tc=25)
PD
Single Pulsed Avalanche Energy (note 4)
EAS
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. This test is performed with no heat sink at Ta=25.
3. This test is performed with infinite heat sink at Tc=25.
4. EAS condition: Tj=25,VDD=40V,VGS=10V,L=0.5mH,Rg=25.
Value
85
±20
80
320
2
170
620
62.5
150
-55 ~+150
www.cj-elec.com
1
Unit
V
A
W
W
mJ
/W
D,Jul,2016

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