(PDF) CJM1208 Datasheet - P-Channel Power MOSFET

Número de pieza	CJM1208
Descripción	P-Channel Power MOSFET
Fabricantes	JCET
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No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS CJM1208 P-Channel MOSFET V(BR)DSS -12V RDS(on)MAX 28mΩ@-4.5V 32mΩ@-3.7V 40mΩ@-2.5V 63mΩ@-1.8V 150mΩ@-1.5V ID -8A DFNWB2×2-6L-J FEATURE  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge APPLICATION  PWM application  Load switch  Battery charge in cellular handset MARKING: Equivalent Circuit ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Symbol VDS VGS ID IDM* RθJA Tj TSTG *Repetitive rating：Pluse width limited by junction temperature. Value -12 ±8 -8 -28 357 150 -55 ~+150 www.cj-elec.com 1 Unit V A ℃/W ℃ B,May,2015 1 page DFNWB2X2-6L Tape and Reel www.cj-elec.com 5 B,May,2015 5 Page

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PDF CJM1208 Data sheet ( Hoja de datos )