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Número de pieza | CJM1206 | |
Descripción | P-Channel Power MOSFET | |
Fabricantes | JCET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CJM1206 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS
CJM1206 P-Channel Power MOSFET
DFNWB2*2-6L-J
V(BR)DSS
-12V
RDS(on)MAX
45 mΩ@-4.5V
60 mΩ@-2.5V
90 mΩ@-1.8V
ID
-6A
1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
DESCRIPTION
The CJM1206 uses advanced trench technology to provide
excellent RDS(on) , low gate charge and operation with low gate voltage.
. This device is suitable for use as a load switching application
and a wide variety of other applications.
FEATURES
Advanced trench MOSFET process technology
Ultra low on-resistance with low gate charge
0$5.,1*
APPLICATIONS
PWM application
Load switch
Battery charge in cellular handset
Equivalent Circuit
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM*
RθJA
Tj
TSTG
*Repetitive rating:Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-12
±8
-6
-20
357
150
-55 ~+150
Unit
V
A
℃/W
℃
C,May,2015
1 page DFNWB2X2-6L Tape and Reel
www.cj-elec.com
5
C,May,2015
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet CJM1206.PDF ] |
Número de pieza | Descripción | Fabricantes |
CJM1206 | P-Channel Power MOSFET | JCET |
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