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PDF BCF030T Data sheet ( Hoja de datos )

Número de pieza BCF030T
Descripción HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
Fabricantes BeRex 
Logotipo BeRex Logotipo



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No Preview Available ! BCF030T Hoja de datos, Descripción, Manual

BCF030T
HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 300 µm)
The BeRex BCF030T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 300 micron gate
width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise
while providing high-gain and medium power from DC to 26.5 GHz frequency range. This product is well
suited for either wideband or narrow-band applications. The BCF030T is produced using state of the art
metallization and devices from each wafer are screened to insure reliability. These chips utilize SI3N4
passivation for increased reliability.
Product Features
21.5 dBm Typical Output Power
13.5 dB Typical Power Gain @ 12 GHz
Low Phase Noise
0.3 X 300 Micron Recessed Gate
Applications
Commercial
Military / Hi-Rel
Test & Measurement
DC CHARACTERISTIC (Ta = 25° C)
PARAMETER/TEST CONDITIONS
Idss Saturated Drain Current (Vgs = 0V, Vds = 2V)
Gm Transconductance (Vds = 3V, Vgs = 50% Idss)
Vp Pinch-off Voltage (Ids = 300 µA, Vds = 3V)
BVgd Drain Breakdown Voltage (Ig = 0.2 mA, source open)
BVgs Source Breakdown Voltage (Ig = 0.2 mA, drain open)
Rth Thermal Resistance (Au-Sn Eutectic Attach)
MINIMU
M
60
35
-3.5
TYPICAL
90
50
-2.0
-15
-10
120
MAXIMU
M
120
-0.5
-11
-7
UNIT
mA
mS
V
V
V
° C/W
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3

1 page




BCF030T pdf
Wire Bonding Options
BCF030T
Gold Bonding Wire information
1. Gate to input transmission line
- Length and Height : 400 um and 250 um
- Number of wires: 1
2. Drain to output transmission line
- Length and Height : 350 um and 250 um
- Number of wires: 1
3. Source to ground plate
- Length and Height : 200 um x 250 um
- Number of wires: 4
Note: The diameter of bonding wires: 1 mil
DIE ATTACH RECOMMENDATIONS:
BeRex recommends the “Eutectic” die attach using Au-Sn (80%-20%) pre-forms. The die attach station must have
accurate temperature control, and the operation should be performed with parts no hotter than 300°C for less
than 10 seconds. An inert forming gas (90% N2-10% H2) or clean, dry N2 should be used.
HANDLING PRECAUTIONS:
GaAs FETs are very sensitive to and may be damaged by Electrostatic Discharge (ESD). Therefore, proper ESD
precautions must be taken whenever you are handling these devices. It is critically important that all work
surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to
prevent ESD damage.
STORAGE & SHIPPING:
BeRex’s standard chip device shipping package consists of an antistatic “Gel-Pak”, holding the chips, placed inside a
sealed antistatic and moisture barrier bag. This packaging is designed to provide a reasonable measure of
protection from both mechanical and ESD damage.
Chip devices should be stored in a clean, dry Nitrogen gas environment at room temperature until they are
required for assembly. Only open the shipping package or perform die assembly in a work area with a class 10,000
or better clean room environment to prevent contamination of the exposed devices.
www.berex.com
BeRex, Inc. 3350 Scott Blvd. #61-01 Santa Clara, CA 95054 tel. (408) 452-5595
Specifications are subject to change without notice. ©BeRex 2015
January 2015
Rev. 1.3

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