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PDF IPB010N06N Data sheet ( Hoja de datos )

Número de pieza IPB010N06N
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
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IPB010N06N
MOSFET
OptiMOSTMPower-Transistor,60V
Features
•Optimizedforsynchronousrectification
•100%avalanchetested
•Superiorthermalresistance
•N-channel,normallevel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS 60
V
RDS(on),max
1.0
m
ID 180 A
Qoss 228 nC
QG(0V..10V)
208
nC
D²-PAK7pin
1
7
tab
Drain
Pin 4, tab
Gate
Pin 1
Source
Pin 2,3,5,6,7
Type/OrderingCode
IPB010N06N
Package
PG-TO263-7
Marking
010N06N
RelatedLinks
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.4,2016-01-18

1 page




IPB010N06N pdf
OptiMOSTMPower-Transistor,60V
IPB010N06N
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time1)
Reverse recovery charge
Symbol
IS
IS,pulse
VSD
trr
Qrr
Min.
-
-
-
-
-
Values
Typ. Max.
- 180
- 720
0.9 1.2
87 139
144 -
Unit Note/TestCondition
A TC=25°C
A TC=25°C
V VGS=0V,IF=100A,Tj=25°C
ns VR=30V,IF=100A,diF/dt=100A/µs
nC VR=30V,IF=100A,diF/dt=100A/µs
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.4,2016-01-18

5 Page





IPB010N06N arduino
OptiMOSTMPower-Transistor,60V
IPB010N06N
RevisionHistory
IPB010N06N
Revision:2016-01-18,Rev.2.4
Previous Revision
Revision Date
2.3 2014-10-03
2.4 2016-01-18
Subjects (major changes since last revision)
Rev. 2.3
Update package outline
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™,
EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™,
ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™,
SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
TrademarksupdatedAugust2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
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Publishedby
InfineonTechnologiesAG
81726München,Germany
©2015InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
TechnologiesOffice(www.infineon.com).
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
11 Rev.2.4,2016-01-18

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