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PDF CD40109BMS Data sheet ( Hoja de datos )

Número de pieza CD40109BMS
Descripción CMOS Quad Low-to-High Voltage Level Shifter
Fabricantes Intersil Corporation 
Logotipo Intersil Corporation Logotipo



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CD40109BMS
December 1992
CMOS Quad Low-to-High Voltage Level Shifter
Features
Description
• High Voltage Type (20V Rating)
• Independence of Power Supply Sequence Considerations
- VCC can Exceed VDD
- Input Signals can Exceed Both VCC and VDD
• Up and Down Level Shifting Capability
• Three-State Outputs with Separate Enable Controls
• 100% Tested for Quiescent Current at 20V
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Pack-
age Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package/Temperature Range)
- 1V at VCC = 5V, VDD = 10V
- 2V at VCC = 10V, VDD = 15V
• Standardized Symmetrical Output Characteristics
• Meets All Requirements of JEDEC Tentative Standard
No. 13B, “Standard Specifications for Description of
‘B’ Series CMOS Devices”
CD40109BMS contains four low-to-high voltage level shifting
circuits. Each circuit will shift a low voltage digital logic input
signal (A, B, C, D) with logical 1 = VCC and logical 0 = VSS
to a higher voltage output signal (E, F, G, H) with logical
1 = VDD and logical 0 = VSS.
The CD40109BMS, unlike other low-to-high level shifting
circuits, does not require the presence of the high voltage
supply (VDD) before the application of either the low voltage
supply (VCC) or the input signals. There are no restrictions
on the sequence of application of VDD, VCC, or the input
signals. In addition, with one exception there are no
restrictions on the relative magnitudes of the supply voltages
or input signals within the device maximum ratings, provided
that the input signal swings between VSS and at least
0.7VCC; VCC may exceed VDD, and input signals may
exceed VCC and VDD. When operated in the mode
VCC > VDD, the CD40109BMS will operate as a high-to-low
level shifter.
The CD40109BMS also features individual three-state out-
put capability. A low level on any of the separately enabled
three-state output controls produces a high impedance state
in the corresponding output.
Applications
• High or Low Level Shifting with Three-State Outputs
for Unidirectional or Bidirectional Bussing
• Isolation of Logic Subsystems Using Separate Power
Supplies from Supply Sequencing, Supply Loss and
Supply Regulation Considerations
The CD40109BMS is supplied in these 16-lead outline
packages:
Braze Seal DIP
Frit Seal DIP
Ceramic Flatpack
H4T
H1E
H6W
Pinout
CD40109BMS
TOP VIEW
VCC 1
ENABLE A 2
A3
E4
F5
B6
ENABLE B 7
VSS 8
16 VDD
15 ENABLE D
14 D
13 H
12 NC
11 G
10 C
9 ENABLE C
Functional Diagram
1 OF 4 UNITS
VCC
VDD
LEVEL
A SHIFTER
ENABLE A
LEVEL
SHIFTER
E
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
7-36
File Number 3196

1 page




CD40109BMS pdf
Specifications CD40109BMS
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
LIMITS
PARAMETER
Propagation Delay
3-State Shift Mode H-L
Propagation Delay
3-State Shift Mode L-H
Propagation Delay
3-State Shift Mode H-L
Propagation Delay
3-State Shift Mode L-H
Propagation Delay
3-State Shift Mode H-L
SYMBOL
CONDITIONS
TPLZ2 VDD = 5V, VCC = 15V
VDD = 10V, VCC = 15V
TPZH1 VDD = 15V, VCC = 5V
VDD = 15V, VCC = 10V
TPZH2 VDD = 5V, VCC = 15V
VDD = 10V, VCC = 15V
TPZL1 VDD = 15V, VCC = 5V
VDD = 15V, VCC = 10V
TPZL2 VDD = 5V, VCC = 15V
VDD = 10V, VCC = 15V
NOTES
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
TEMPERATURE
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
+25oC
MIN
-
-
-
-
-
-
-
-
-
-
MAX
500
260
460
360
600
260
160
80
400
80
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES:
1. All voltages referenced to device GND.
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized
on initial design release and upon design changes which would affect these characteristics.
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
4. CL = 50pF, RL = 1K, Input TR, TF < 20ns.
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Supply Current
N Threshold Voltage
N Threshold Voltage
Delta
P Threshold Voltage
P Threshold Voltage
Delta
Functional
Propagation Delay Time
SYMBOL
CONDITIONS
IDD VDD = 20V, VIN = VDD or GND
VNTH VDD = 10V, ISS = -10µA
VTN VDD = 10V, ISS = -10µA
VTP
VTP
VSS = 0V, IDD = 10µA
VSS = 0V, IDD = 10µA
F
TPHL
TPLH
VDD = 18V, VIN = VDD or GND
VDD = 3V, VIN = VDD or GND
VDD = 5V
NOTES: 1. All voltages referenced to device GND.
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.
NOTES
1, 4
1, 4
1, 4
TEMPERATURE
+25oC
+25oC
+25oC
MIN
-
-2.8
-
1, 4
+25oC
0.2
1, 4
+25oC
-
1
1, 2, 3, 4
+25oC
+25oC
VOH >
VDD/2
-
3. See Table 2 for +25oC limit.
4. Read and Record
MAX
7.5
-0.2
±1
2.8
±1
VOL <
VDD/2
1.35 x
+25oC
Limit
UNITS
µA
V
V
V
V
V
ns
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25oC
PARAMETER
SYMBOL
DELTA LIMIT
Supply Current - MSI-1
IDD ± 0.2µA
Output Current (Sink)
IOL5
± 20% x Pre-Test Reading
Output Current (Source)
IOH5A
± 20% x Pre-Test Reading
CONFORMANCE GROUP
Initial Test (Pre Burn-In)
TABLE 6. APPLICABLE SUBGROUPS
MIL-STD-883
METHOD
100% 5004
GROUP A SUBGROUPS
1, 7, 9
READ AND RECORD
IDD, IOL5, IOH5A
7-40

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