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Número de pieza | DG413 | |
Descripción | Precision Monolithic Quad SPST CMOS Analog Switches | |
Fabricantes | Vishay | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DG413 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
No Preview Available ! DG411, DG412, DG413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
FEATURES
• Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - RDS(on): 25
• Fast switching - tON: 110 ns
• Ultra low power - PD: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
• Precision automatic test equipment
• Precision data acquisition
• Communication systems
• Battery powered systems
• Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
16 IN2 Key
15 D2
14 S2
13 V+
12 VL
11 S3
10 D3
S1
V-
NC
GND
S4
4
5
6
7
8
9 IN3
Top View
DG411
LCC
D1 IN1 NC IN2 D2
3 2 1 20 19
9 10 11 12 13
D4 IN4 NC IN3 D3
Top View
18 S2
17 V+
16 NC
15 VL
14 S3
TRUTH TABLE
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
DG411
ON
OFF
DG412
OFF
ON
DG413
Dual-In-Line and SOIC
IN1 1
D1 2
S1 3
V- 4
GND 5
S4 6
D4 7
IN4 8
Key
16 IN2
15 D2 S1
14 S2 V-
13 V+
NC
12 VL
GND
11 S3
10 D3
S4
4
5
6
7
8
9 IN3
Top View
DG413
LCC
D1 IN1 NC IN2 D2
3 2 1 20 19
9 10 11 12 13
D4 IN4 NC IN3 D3
Top View
18 S2
17 V+
16 NC
15 VL
14 S3
TRUTH TABLE
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
SW1, SW4
OFF
ON
SW2, SW3
ON
OFF
Document Number: 70050
www.vishay.com
S11-1185-Rev. G, 13-Jun-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
30 V+ = 15 V
20
V- = - 15 V
VL = 5 V
10 TA = 25 °C
0
- 10
- 20
ID(off)
IS(off)
ID(on)
- 30
- 40
- 50
- 60
- 15
- 10 - 5
0
5 10
VD or VS - Drain or Source Voltage (V)
Leakage Current vs. Analog Voltage
15
35
V+ = 15 V
V- = - 15 V
30 VL = 5 V
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
5
- 15
- 10
-5
0
5
VD - Drain Voltage (V)
10
ID, IS Leakages vs. Temperature
15
100
V+ = 15 V
80 V- = - 15 V
VL = 5 V
60
40
CL = 10 nF
20
0
CL = 1 nF
- 20
- 40
- 60
- 15
- 10
-5
0 5 10
VS - Source Voltage (V)
Charge Injection vs. Analog Voltage
15
3.5
3.0
2.5
VL = 7.5 V
2.0
6.5 V
1.5
1.0
4.5 V
5.5 V
0.5
0
5 10 15 20 25 30 35 40
(V+)
Input Switching Threshold vs. Supply Voltage
140
120 V+ = 15 V
V- = - 15 V
100 VL = 5 V
CL = 10 nF
80
60
CL = 1 nF
40
20
0
- 20
- 40
- 60
- 15
- 10 - 5
0 5 10
VD - Drain Voltage (V)
Charge Injection vs. Analog Voltage
15
240
210 V+ = 15 V
V- = - 15 V
180
VL = 5 V
VS = 10 V
150
120
90
60
tON
tOFF
30
0
- 55 - 35 - 15
5 25 45 65
Temperature (°C)
85 105 125
Switching Time vs. Temperature
Document Number: 70050
www.vishay.com
S11-1185-Rev. G, 13-Jun-11
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page CERDIP: 16ĆLEAD
Package Information
Vishay Siliconix
16 15 14 13 12 11 10 9
12 3 4 5 6 7 8
E1 E
S
L1
D
Q1
A
A1
L
e1
B1
B
C
eA
MILLIMETERS
Dim Min
Max
A 4.06 5.08
A1 0.51
B 0.38
1.14
0.51
B1 1.14
C 0.20
1.65
0.30
D 19.05 19.56
E 7.62 8.26
E1 6.60
7.62
e1 2.54 BSC
eA 7.62 BSC
L 3.18 3.81
L1 3.81
Q1 1.27
S 0.38
5.08
2.16
1.14
∝ 0°
15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
INCHES
Min Max
0.160
0.200
0.020
0.045
0.015
0.020
0.045
0.065
0.008
0.012
0.750
0.770
0.300
0.325
0.260
0.300
0.100 BSC
0.300 BSC
0.125
0.150
0.150
0.200
0.050
0.085
0.015
0.045
0° 15°
∝
Document Number: 71282
03-Jul-01
www.vishay.com
1
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet DG413.PDF ] |
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