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PDF IPT65R033G7 Data sheet ( Hoja de datos )

Número de pieza IPT65R033G7
Descripción MOSFET ( Transistor )
Fabricantes Infineon 
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No Preview Available ! IPT65R033G7 Hoja de datos, Descripción, Manual

IPT65R033G7
MOSFET
650VCoolMOSªC7Goldseries(G7)PowerTransistor
TheC7GOLDseries(G7)forthefirsttimebringstogetherthebenefitsof
theC7GOLDCoolMOS™technology,4pinKelvinSourcecapabilityand
theimprovedthermalpropertiesoftheTOLLpackagetoenableapossible
SMDsolutionforhighcurrenttopologiessuchasPFCupto3kW
Features
•C7GoldgivesbestinclassFOMRDS(on)*EossandRDS(on)*Qg.
•C7GoldtechnologyenablesbestinclassRDS(on)insmallestfootprint.
•TOLLpackagehasinbuilt4thpinKelvinSourceconfigurationandlow
parasiticsourceinductance(~1nH).
•TOLLpackageisMSL1compliant,totalPb-free,haseasyvisual
inspectiongroovedleadsandisqualifiedforindustrialapplications
accordingtoJEDEC(J-STD20andJESD22).
•TOLLSMDpackagecombinedwithleadfreedieattachprocessenables
improvedthermalperformanceRth.
Benefits
•C7GoldFOMRDS(on)*Qgis14%betterthanpreviousC7650Venabling
fasterswitchingleadingtohigherefficiency.
•C7Goldcanreach33mininTOLL115mm2footprint,whereasprevious
BICC7650Vwas45min150mm2D2PAKfootprint.
•ReducingparasiticsourceinductancebyKelvinSourceimproves
efficiencybyfasterswitchingandeaseofuseduetolessringing.
•TOLLpackageiseasytouseandhasthehighestqualitystandards.
•ImprovedthermalsenableSMDTOLLpackagetobeusedinhigher
currentdesignsthanhasbeenpreviouslypossible.
Applications
PFCstagesandhardswitchingPWMstagesfore.g.Computing,Server,
Telecom,UPSandSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
RDS(on),max
700
33
V
m
Qg.typ
110
ID,pulse
245
ID,continuous @ Tj<150°C 77
Eoss@400V
13.5
nC
A
A
µJ
Body diode di/dt
60
A/µs
Type/OrderingCode
IPT65R033G7
Package
PG-HSOF-8
Marking
65C7033G
HSOF
12345 678
Tab
Drain
Tab
Gate
Pin 1
Driver
Source
Pin 2
Source
Pin 3-8
RelatedLinks
see Appendix A
Final Data Sheet
1 Rev.2.1,2016-03-14

1 page




IPT65R033G7 pdf
650VCoolMOSªC7Goldseries(G7)PowerTransistor
IPT65R033G7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V(BR)DSS
V(GS)th
IDSS
IGSS
RDS(on)
RG
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related1)
Effective output capacitance, time
related2)
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
650
3
-
-
-
-
-
-
Values
Typ. Max.
--
3.5 4
-2
45 -
- 100
0.029 0.033
0.072 -
0.85 -
Unit
V
V
µA
nA
Note/TestCondition
VGS=0V,ID=1mA
VDS=VGS,ID=1.44mA
VDS=650,VGS=0V,Tj=25°C
VDS=650,VGS=0V,Tj=150°C
VGS=20V,VDS=0V
VGS=10V,ID=28.9A,Tj=25°C
VGS=10V,ID=28.9A,Tj=150°C
f=1MHz,opendrain
Min.
-
-
-
Values
Typ. Max.
5000 -
80 -
169 -
Unit Note/TestCondition
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=400V,f=250kHz
pF VGS=0V,VDS=0...400V
- 1880 - pF ID=constant,VGS=0V,VDS=0...400V
-
20 -
ns
VDD=400V,VGS=13V,ID=28.9A,
RG=3.3;seetable9
-
8-
ns
VDD=400V,VGS=13V,ID=28.9A,
RG=3.3;seetable9
-
85 -
ns
VDD=400V,VGS=13V,ID=28.9A,
RG=3.3;seetable9
-
5-
ns
VDD=400V,VGS=13V,ID=28.9A,
RG=3.3;seetable9
Min.
-
-
-
-
Values
Typ. Max.
27 -
35 -
110 -
5.4 -
Unit Note/TestCondition
nC VDD=400V,ID=28.9A,VGS=0to10V
nC VDD=400V,ID=28.9A,VGS=0to10V
nC VDD=400V,ID=28.9A,VGS=0to10V
V VDD=400V,ID=28.9A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
Final Data Sheet
5
Rev.2.1,2016-03-14

5 Page





IPT65R033G7 arduino
650VCoolMOSªC7Goldseries(G7)PowerTransistor
IPT65R033G7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Diode recovery waveform
V,I
VDS( peak)
VDS
IF
dIF / dt
Irrm
VDS
trr
tF tS
IF t
QF QS
10 %Irrm
dIrr / dt Qtrrrr ==tFQ+F t+S QS
Table9switchingtimes(ss)
Switching times test circuit for inductive load
VGS
VDS
VDS
VGS
Switching times waveform
90%
10%
td(on) tr
ton
td(off) tf
toff
Table10Unclampedinductiveload(ss)
Unclamped inductive load test circuit
ID VDS
Unclamped inductive waveform
V(BR)DS
VDS
ID
VDS
Final Data Sheet
11 Rev.2.1,2016-03-14

11 Page







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