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PDF IPT020N10N3 Data sheet ( Hoja de datos )
| Número de pieza | IPT020N10N3 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Infineon | |
| Logotipo |  |
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MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOSTM
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
DataSheet
Rev.2.0
Final
PowerManagement&Multimarket
1 page  
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
4Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
gfs
Min.
100
2
-
-
-
-
-
-
125
Values
Typ. Max.
--
2.7 3.5
0.1 1
10 100
1 100
1.7 2
2.2 3.7
1.9 2.9
250 -
Unit Note/TestCondition
V VGS=0V,ID=1mA
V VDS=VGS,ID=272µA
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
nA VGS=20V,VDS=0V
mΩ
VGS=10V,ID=150A
VGS=6V,ID=75A,
Ω-
S |VDS|>2|ID|RDS(on)max,ID=150A
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Ciss
Coss
Crss
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
-
-
-
-
-
Values
Unit
Typ. Max.
11200 14896 pF
2010 2673 pF
69 138 pF
34 -
ns
58 -
ns
84 -
ns
18 -
ns
Note/TestCondition
VGS=0V,VDS=50V,f=1MHz
VGS=0V,VDS=50V,f=1MHz
VGS=0V,VDS=50V,f=1MHz
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
VDD=50V,VGS=10V,ID=100A,
RG,ext=1.6Ω
Table6Gatechargecharacteristics1)
Parameter
Symbol
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Qgs
Qgd
Qsw
Qg
Vplateau
Qoss
Min.
-
-
-
-
-
-
Values
Typ. Max.
48 -
27 -
42 -
156 207
4.3 -
55 -
Unit Note/TestCondition
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,ID=100A,VGS=0to10V
V VDD=50V,ID=100A,VGS=0to10V
nC VDD=50V,VGS=0V
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
5
Rev.2.0,2014-02-17
5 Page 
6PackageOutlines
OptiMOSTM3Power-Transistor,100V
IPT020N10N3
1) partially covered with Mold Flash
MILLIMETERS
DIM
MIN MAX
A 2.20 2.40
b 0.70 0.90
b1 9.70 9.90
b2 0.42 0.50
c 0.40 0.60
D
10.28
10.58
D2 3.30
E 9.70 10.10
E1 7.50
E4 8.50
E5 9.46
e 1.20 (BSC)
H
11.48
11.88
H1 6.55 6.75
H2 7.15
H3 3.59
H4 3.26
N8
K1 4.18
L 1.60 2.10
L1 0.50 0.90
L2 0.50 0.70
L4 1.00 1.30
INCHES
MIN MAX
0.087
0.094
0.028
0.035
0.382
0.390
0.017
0.020
0.016
0.024
0.405
0.416
0.130
0.382
0.398
0.295
0.335
0.372
0.047 (BSC)
0.452
0.468
0.258
0.266
0.281
0.141
0.128
8
0.165
0.063
0.083
0.020
0.035
0.020
0.028
0.039
0.051
Figure1OutlinePG-HSOF-8-1,dimensionsinmm/inches
Final Data Sheet
11
DOCUMENT NO.
Z8B00169619
SCALE
0
2
02
4mm
EUROPEAN PROJECTION
ISSUE DATE
14-06-2013
REVISION
01
Rev.2.0,2014-02-17
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IPT020N10N3.PDF ] | |
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